| Customization: | Available |
|---|---|
| After-sales Service: | 12months |
| Warranty: | 12months |
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The FDC wafer edge grinder is mainly used for edge chamfering of wafers. During the manufacturing process of chips, there may be issues with unevenness and sharpness at the edges, which may affect subsequent processing and use. Using a wafer edge rounding machine can round the edges of the wafer to make them more uniform and smooth, while removing sharp edges and reducing damage to subsequent processes and equipment.
The benefits of edge grinding (chamfering) mainly include the following three aspects.
1. Prevent wafer edge fragmentation. During the manufacturing and use of wafers, they are often hit by robotic arms, which can cause the edges of the wafer to crack and form stress concentrated areas.These stress concentrated areas will cause the wafer to continuously release polluting particles during use,This in turn affects the yield of the product.
2.Prevent the concentration of thermal stress. Wafers undergo numerous high-temperature processes during use, such as oxidation and diffusion, when the thermal stress generated in these processes exceeds that of the silicon lattice.When the strength is high, dislocation and stacking fault defects will occur, and grain edge rounding can avoid such defects.Produced at the crystal edge.
3.Increase the flatness of the epitaxial layer and photoresist layer at the edge of the wafer. In the epitaxial process, the growth rate of sharp corner areas is higher than that of flat areas, therefore, using ungrounded wafers is prone to protrusions at the edges. Similarly, when using a rotary coating machine to apply photoresist, the photoresist solution will also accumulate at the edges of the wafer, and these uneven edges will affect the accuracy of the mask focusing.
| TERM | PRAMETER |
| Applicable Wafer Size | 2/4/6-inch 4/6/8-inch |
| G.Wheel Diameter | Medium 205 mm |
| G. Wheel R. Speed | 500- 3000 min-1 |
| G. Wheel Motor Power | 1kW |
| Max. Travserse Rate | 10 mm/s |
| In-Feed Resolution | 0.5μm/s |
| Feed ing Motor Power | 0.4 kW |
| No. of Worktable | 2 |
| Worktable Rotat. Speed | 0-400 min-1 |
| Thick. Inspect. Accuracy | 0.5μm |
| CCD Position. Accuracy | 2.5μm |
| Chamfering Roundness | ≤10μm |
| Chamfering Angularity | ±0.05° |
| Diameter Control | ≤15μm |
| External Dimension | 2000×1150×1950 |
| Total Weight | 1000 kg |
| Wafer | G.Amount | Ne of Wafer | Dia. Before Grind ing | Dia. After Grinding | Roundness Varia tion |
| Sapphire 4-inch | 0.01 mm | 1 | 99.632 | 99.613 | 6 |
| 2 | 99.61 | 99.599 | 7 | ||
| 3 | 99.6 | 99.589 | 7 | ||
| 4 | 99.592 | 99.579 | 4 | ||
| 5 | 99.58 | 99.571 | 4 |
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